TN0610N3-G-P003, MOSFETs N-CH Enhancmnt Mode MOSFET
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Описание
Unclassified
Технические параметры
Brand: | Microchip Technology |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Fall Time: | 16 ns |
Id - Continuous Drain Current: | 500 mA |
Manufacturer: | Microchip |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-92-3 |
Packaging: | Reel, Cut Tape |
Pd - Power Dissipation: | 1 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Rds On - Drain-Source Resistance: | 15 Ohms |
Rise Time: | 14 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 16 ns |
Typical Turn-On Delay Time: | 6 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 600 mV |
Case | TO92 |
Drain current | 0.5A |
Drain-source voltage | 100V |
Gate-source voltage | ±20V |
Kind of channel | enhanced |
Kind of package | reel, tape |
Manufacturer | MICROCHIP TECHNOLOGY |
Mounting | THT |
On-state resistance | 1.5Ω |
Polarisation | unipolar |
Power dissipation | 1W |
Pulsed drain current | 3.2A |
Type of transistor | N-MOSFET |
Вес, г | 0.45 |
Техническая документация
Datasheet TN0610N3-G-P013
pdf, 763 КБ