TN2106K1-G, MOSFETs 60V 2.5Ohm
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см. техническую документацию
см. техническую документацию
840 ֏
от 100 шт. —
660 ֏
от 500 шт. —
530 ֏
от 3000 шт. —
486 ֏
1 шт.
на сумму 840 ֏
Описание
Unclassified
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process.
Технические параметры
Brand: | Microchip Technology |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 5 ns |
Forward Transconductance - Min: | 150 mS |
Id - Continuous Drain Current: | 280 mA |
Manufacturer: | Microchip |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 360 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Rds On - Drain-Source Resistance: | 2.5 Ohms |
Rise Time: | 5 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | FET |
Typical Turn-Off Delay Time: | 6 ns |
Typical Turn-On Delay Time: | 3 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 600 mV |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Material | Si |
Maximum Continuous Drain Current (A) | 0.28 |
Maximum Drain Source Resistance (mOhm) | 2500@10V |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 360 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | DMOS |
Product Category | Power MOSFET |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Typical Fall Time (ns) | 5 |
Typical Input Capacitance @ Vds (pF) | 35@25V |
Typical Output Capacitance (pF) | 17 |
Typical Rise Time (ns) | 5 |
Typical Turn-Off Delay Time (ns) | 6 |
Typical Turn-On Delay Time (ns) | 3 |
Forward Diode Voltage | 1.8V |
Maximum Continuous Drain Current | 280 mA |
Maximum Drain Source Resistance | 5 Ω |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | 20 V |
Maximum Gate Threshold Voltage | 2V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 360 mW |
Minimum Gate Threshold Voltage | 0.6V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | TO-236 |
Series | TN2106 |
Transistor Configuration | Single |
Width | 1.4mm |
Вес, г | 0.01 |