TP0604N3-G, MOSFETs 40V 2 Ohm
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2 200 ֏
от 100 шт. —
1 680 ֏
от 500 шт. —
1 320 ֏
1 шт.
на сумму 2 200 ֏
Описание
Unclassified
P-канал 40V 430mA (Tj) 740mW (Ta) сквозное отверстие TO-92-3
Технические параметры
Brand: | Microchip Technology |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 6 ns |
Forward Transconductance - Min: | 400 mS |
Id - Continuous Drain Current: | 430 mA |
Manufacturer: | Microchip |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-92-3 |
Packaging: | Bulk |
Pd - Power Dissipation: | 740 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Rds On - Drain-Source Resistance: | 2 Ohms |
Rise Time: | 7 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 10 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Base Product Number | TP0604 -> |
Current - Continuous Drain (Id) @ 25В°C | 430mA (Tj) |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
ECCN | EAR99 |
FET Type | P-Channel |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 20V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Bulk |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
PCN Assembly/Origin | http://www.microchip.com/mymicrochip/NotificationD |
PCN Packaging | http://www.microchip.com/mymicrochip/NotificationD |
Power Dissipation (Max) | 740mW (Ta) |
Rds On (Max) @ Id, Vgs | 2Ohm @ 1A, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | TO-92-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA |
Channel Type | P Channel |
Drain Source On State Resistance | 1.5Ом |
Power Dissipation | 740мВт |
Количество Выводов | 3вывод(-ов) |
Максимальная Рабочая Температура | 150 C |
Монтаж транзистора | Through Hole |
Напряжение Измерения Rds(on) | 10В |
Напряжение Истока-стока Vds | 40В |
Непрерывный Ток Стока | 430мА |
Полярность Транзистора | P Канал |
Пороговое Напряжение Vgs | 2.4В |
Рассеиваемая Мощность | 740мВт |
Сопротивление во Включенном Состоянии Rds(on) | 1.5Ом |
Стиль Корпуса Транзистора | TO-92 |
Case | TO92 |
Drain-source voltage | -40V |
Gate-source voltage | ±20V |
Kind of channel | enhanced |
Kind of package | bulk |
Manufacturer | MICROCHIP TECHNOLOGY |
Mounting | THT |
On-state resistance | 2Ω |
Polarisation | unipolar |
Pulsed drain current | -2A |
Type of transistor | P-MOSFET |
Вес, г | 0.2 |