BCR 108 E6327, Digital Transistors AF TRANS DIGITAL BJT NPN 50V 100MA
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см. техническую документацию
см. техническую документацию
484 ֏
от 10 шт. —
313 ֏
от 100 шт. —
190 ֏
от 1000 шт. —
80 ֏
1 шт.
на сумму 484 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Configuration: | Single |
| Continuous Collector Current: | 100 mA |
| DC Collector/Base Gain hfe Min: | 70 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SP000010736 BCR18E6327XT BCR108E6327HTSA1 |
| Peak DC Collector Current: | 100 mA |
| Product Category: | Bipolar Transistors-Pre-Biased |
| Product Type: | BJTs-Bipolar Transistors-Pre-Biased |
| Qualification: | AEC-Q101 |
| Series: | BCR108 |
| Subcategory: | Transistors |
| Transistor Polarity: | NPN |
| Typical Input Resistor: | 2.2 kOhms |
| Typical Resistor Ratio: | 0.047 |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 867 КБ
