BGA8U1BN6E6327XTSA1, RF Amplifier RF SILICON MMIC

BGA8U1BN6E6327XTSA1, RF Amplifier RF SILICON MMIC
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Номенклатурный номер: 8005238833

Описание

RF & Wireless\RF Integrated Circuits\RF Amplifier
Low Noise Amplifier (LNA) ICs Infineon Technologies Low Noise Amplifier (LNA) ICs boost data rates and reception quality of wireless applications by utilizing a very low-power signal without significant signal-to-noise ratio degradation. The improved receiver sensitivity enhances user experiences and satisfies market requirements. These highly integrated, small-packaged devices come with ESD protection and low power consumption, which is ideal for battery-operated mobile devices. Users of 4G/5G, GPS, Mobile TV, Wi-Fi, and FM portable devices will enjoy high data-rate reception, fast/precise navigation, and smooth, high-quality streaming even in the worst reception conditions.

Технические параметры

Brand: Infineon Technologies
Factory Pack Quantity: 15000
Gain: 13.7 dB
Manufacturer: Infineon
Maximum Operating Temperature: +85 C
Minimum Operating Temperature: -40 C
Mounting Style: SMD/SMT
NF - Noise Figure: 1.6 dB
OIP3 - Third Order Intercept: -10 dBm
Operating Frequency: 4 GHz to 6 GHz
Operating Supply Current: 4.5 mA
Operating Supply Voltage: 1.6 V to 3.1 V
P1dB - Compression Point: -18 dBm
Package/Case: TSNP-6
Packaging: Reel, Cut Tape
Part # Aliases: BGA 8U1BN6 E6327 SP001495624
Product Category: RF Amplifier
Product Type: RF Amplifier
Subcategory: Wireless & RF Integrated Circuits
Supply Voltage - Max: 3.1 V
Supply Voltage - Min: 1.6 V
Technology: SiGe
Test Frequency: 5.5 GHz
Type: Low Noise Amplifiers
Automotive No
Maximum Operating Supply Voltage - (V) 3.1
Maximum Supply Current - (mA) 5.5@2.8V
Military No
Operating Temperature - (??C) -40~85
Packaging Tape and Reel
Pin Count 6
Supplier Package TSNP
Typical Noise Figure - (dB) 7.5@5500MHz
Typical Power Gain - (dB) 13.7@5500MHz
Вес, г 0.001

Техническая документация

Datasheet
pdf, 307 КБ