FP100R12KT4PBPSA1, IGBT Modules LOW POWER ECONO
185 000 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.75 V |
| Configuration: | 3-Phase Inverter |
| Continuous Collector Current at 25 C: | 100 A |
| Factory Pack Quantity: | 6 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Packaging: | Tray |
| Part # Aliases: | FP100R12KT4P SP001380892 |
| Pd - Power Dissipation: | 515 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 1 |
