FP35R12W2T4PB11BPSA1, IGBT Modules N
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см. техническую документацию
см. техническую документацию
80 300 ֏
1 шт.
на сумму 80 300 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
The Infineon EasyPIM three phase input rectifier power integrated modules IGBT module with TRENCHSTOP IGBT7 technology.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Configuration: | 3-Phase Inverter |
| Continuous Collector Current at 25 C: | 35 A |
| Factory Pack Quantity: | 18 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Packaging: | Tray |
| Part # Aliases: | FP35R12W2T4P_B11 SP001326042 |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 35 A |
| Maximum Gate Emitter Voltage | 20V |
| Maximum Power Dissipation | 20 mW |
| Number of Transistors | 7 |
| Package Type | EASY2B |
| Вес, г | 39 |
