IKFW75N65EH5XKSA1, IGBTs Y
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10 400 ֏
от 10 шт. —
9 200 ֏
от 25 шт. —
7 500 ֏
от 100 шт. —
6 300 ֏
1 шт.
на сумму 10 400 ֏
Описание
Unclassified
TRENCHSTOP™ 5 IGBTs Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.65 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: | 240 |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Packaging: | Tube |
| Part # Aliases: | IKFW75N65EH5 SP001728808 |
| Pd - Power Dissipation: | 148 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1456 КБ
