IKP20N60H3, IGBTs 600V HI SPEED SW IGBT
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
4 490 ֏
от 10 шт. —
2 510 ֏
от 100 шт. —
1 930 ֏
от 500 шт. —
1 420 ֏
1 шт.
на сумму 4 490 ֏
Описание
Unclassified
IGBT Transistors 600V HI SPEED SW IGBT
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.95 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 40 A |
| Factory Pack Quantity: | 500 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | IKP2N6H3XK SP000852236 IKP20N60H3XKSA1 |
| Pd - Power Dissipation: | 170 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 1.95 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 40 A |
| Continuous Collector Current Ic Max | 40 A |
| Factory Pack Quantity | 500 |
| Gate-Emitter Leakage Current | 100 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 FP |
| Packaging | Tube |
| Part # Aliases | IKP20N60H3XK IKP20N60H3XKSA1 SP000852236 |
| Pd - Power Dissipation | 170 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | IKP20N60 |
| Technology | Si |
| Unit Weight | 0.08113 oz |
| Вес, г | 3 |
Техническая документация
Datasheet
pdf, 2224 КБ
