IKP30N65H5, IGBT Transistors IGBT PRODUCTS TrenchStop 5
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см. техническую документацию
см. техническую документацию
4 850 ֏
от 10 шт. —
4 050 ֏
от 25 шт. —
2 650 ֏
от 100 шт. —
2 060 ֏
Добавить в корзину 1 шт.
на сумму 4 850 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high-speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. Infineon H5 IGBTs offer leading efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid- to high-range switching frequency converters.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.65 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 55 A |
| Factory Pack Quantity: | 500 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Operating Temperature Range: | -40 C to+175 C |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | SP001133084 IKP30N65H5XKSA1 |
| Pd - Power Dissipation: | 188 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 2238 КБ
