IKQ50N120CH3XKSA1, IGBTs IGBT PRODUCTS
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см. техническую документацию
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13 200 ֏
от 10 шт. —
11 000 ֏
от 25 шт. —
10 000 ֏
1 шт.
на сумму 13 200 ֏
Описание
Unclassified
Транзистор IGBT 1200В 100A 652Вт
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 2 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 100 A |
Continuous Collector Current Ic Max: | 100 A |
Factory Pack Quantity: Factory Pack Quantity: | 240 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | -20 V, +20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Part # Aliases: | IKQ50N120CH3 SP001272708 |
Pd - Power Dissipation: | 652 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | IGBT HighSpeed 3 |
Subcategory: | IGBTs |
Technology: | Si |
Tradename: | TRENCHSTOP |
Channel Type | N |
Collector Current (DC) | 100(A) |
Configuration | Single |
Gate to Emitter Voltage (Max) | ±20(V) |
Mounting | Through Hole |
Operating Temperature (Max) | 175C |
Operating Temperature (Min) | -40C |
Operating Temperature Classification | AUTOMOTIVEC |
Package Type | TO-247 |
Packaging | Rail/Tube |
Pin Count | 3+Tab |
Rad Hardened | No |
Вес, г | 6 |
Техническая документация
Datasheet
pdf, 1627 КБ