IKQ75N120CS6XKSA1, IGBT Transistors INDUSTRY 14

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Добавить в корзину 1 шт. на сумму 12 400 ֏

Номенклатурный номер: 8005240084

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Trans IGBT Chip N-CH 1200V 150A 880W 3-Pin(3+Tab) TO-247 Tube

Automotive	No
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Maximum Collector-Emitter Voltage (V)	1200
Maximum Continuous Collector Current (A)	150
Maximum Gate Emitter Leakage Current (uA)	0.6
Maximum Gate Emitter Voltage (V)	±20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	880
Minimum Operating Temperature (°C)	-40
Mounting	Through Hole
Packaging	Tube
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Supplier Package	TO-247
Tab	Tab
Technology	Trench Stop
Typical Collector Emitter Saturation Voltage (V)	1.85
Current - Collector (Ic) (Max)	150A
Current - Collector Pulsed (Icm)	300A
Gate Charge	530nC
IGBT Type	Trench Field Stop
Input Type	Standard
Manufacturer	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-40В°C ~ 175В°C(TJ)
Package / Case	TO-247-3
Power - Max	880W
Reverse Recovery Time (trr)	440ns
Series	TrenchStopв(ў
Supplier Device Package	PG-TO247-3-46
Switching Energy	5.15mJ(on), 2.95mJ(off)
Td (on/off) @ 25В°C	34ns/300ns
Test Condition	600V, 75A, 4Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max)	1200V
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	150 A
Maximum Gate Emitter Voltage	25V
Maximum Power Dissipation	880 W
Number of Transistors	1
Package Type	PG-TO247
Transistor Configuration	Single
Вес, г	6.9