IKW15N120H3, IGBTs IGBT PRODUCTS
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Описание
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High Speed Trench & Fieldstop IGBTs Infineon High Speed Trench & Fieldstop IGBTs use TrenchStop™ and Fieldstop technology to provide superb switching performance, very low VCEsat, and low EMI. Infineon High Speed Trench & Fieldstop IGBTs are ideal for uninterruptible power supplies applications. The IGW25N120H3 IGBT is recommended in combination with SiC Diode IDH15S120 and is also used for solar inverter applications. The IKW15N120H3, IKW30N60H3, and IKW20N60H3 IGBTs are each part of a high speed DuoPack and come with a very soft, fast recovery anti-parallel diode.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.05 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 30 A |
| Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 600 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | SP000674422 IKW15N12H3XK IKW15N120H3FKSA1 |
| Pd - Power Dissipation: | 217 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 38 |
Техническая документация
Datasheet
pdf, 1673 КБ
