IKW40N60H3, IGBTs 600V 40A 306W
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см. техническую документацию
см. техническую документацию
4 710 ֏
1 шт.
на сумму 4 710 ֏
Описание
Unclassified
600V & 1200V TRENCHSTOP IGBTs Infineon 600V & 1200V TRENCHSTOP™ IGBTs combine a trench top-cell and field-stop concept, leading to significantly improved static and dynamic performance. A combination of IGBTs with a soft-recovery Emitter Controlled-Diode further minimises turn-on losses. A compromise between switching and conduction losses allows for high efficiency.Learn more
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.95 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IKW4N6H3XK SP000769928 IKW40N60H3FKSA1 |
| Pd - Power Dissipation: | 306 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 6.5 |
Техническая документация
Datasheet
pdf, 1798 КБ
