IKW75N65EL5XKSA1, IGBT Transistors 650V IGBT Trenchstop 5
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.1 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IKW75N65EL5 SP001174464 |
| Pd - Power Dissipation: | 536 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | Trenchstop IGBT5 L5 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Collector Emitter Saturation Voltage | 1.1В |
| Collector Emitter Voltage Max | 650В |
| Continuous Collector Current | 80А |
| Power Dissipation | 536Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | TRENCHSTOP 5 |
| Максимальная Рабочая Температура | 175 C |
| Стиль Корпуса Транзистора | TO-247 |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Collector-Emitter Saturation Voltage | 1.1 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 80 A |
| Factory Pack Quantity | 240 |
| Gate-Emitter Leakage Current | 100 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | +/-20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part # Aliases | IKW75N65EL5 SP001174464 |
| Pd - Power Dissipation | 536 W |
| Product Category | IGBT Transistors |
| Qualification | AEC-Q100 |
| RoHS | Details |
| Series | TRENCHSTOP 5 L5 |
| Technology | Si |
| Tradename | TRENCHSTOP |
| Channel Type | N |
| Energy Rating | 7.22mJ |
| Gate Capacitance | 12100pF |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 75 A |
| Maximum Power Dissipation | 536 W |
| Mounting Type | Through Hole |
| Package Type | TO-247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Вес, г | 4.43 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1925 КБ
Datasheet IKW75N65EL5
pdf, 1927 КБ
Datasheet IKW75N65EL5XKSA1
pdf, 1830 КБ
