IKY40N120CH3XKSA1, IGBT Transistors INDUSTRY 14
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10 500 ֏
от 10 шт. —
8 600 ֏
от 25 шт. —
7 900 ֏
от 100 шт. —
6 300 ֏
Добавить в корзину 1 шт.
на сумму 10 500 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
The Infineon IGBT3 in TO-247PLUS 4pin package. The 4 pin package configuration provides ultra low inductance to the gate emitter control loop with the 4 pin package directly to the gate driver and allows for reduction the both of E on and E off losses amo
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 2 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 80 A |
Continuous Collector Current Ic Max: | 80 A |
Factory Pack Quantity: | 240 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247-4-2 |
Packaging: | Tube |
Part # Aliases: | IKY40N120CH3 SP001465124 |
Pd - Power Dissipation: | 500 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Channel Type | N |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Continuous Collector Current | 40 A |
Maximum Gate Emitter Voltage | ±20 V, ±30V |
Maximum Power Dissipation | 500 W |
Mounting Type | Through Hole |
Number of Transistors | 1 |
Package Type | TO-247 |
Pin Count | 4 |
Вес, г | 6 |