IKZ75N65ES5XKSA1, IGBT Transistors INDUSTRY 14
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs Infineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction, and PCB bill of material cost optimization. Infineon S5 IGBTs are packed with features to help designers achieve goals without the need to increase circuit complexity.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.42 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Continuous Collector Current Ic Max: | 80 A |
| Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-4 |
| Packaging: | Tube |
| Part # Aliases: | IKZ75N65ES5 SP001602592 |
| Pd - Power Dissipation: | 395 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 1.42 V |
| Maximum Continuous Collector Current | 80 A |
| Maximum Gate Emitter Voltage | 20V |
| Maximum Power Dissipation | 395 W |
| Number of Transistors | 1 |
| Package Type | PG-TO247-4 |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 1406 КБ
Datasheet IKZ75N65ES5XKSA1
pdf, 1427 КБ
