IPZA60R060P7XKSA1, MOSFETs HIGH POWER_NEW
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см. техническую документацию
см. техническую документацию
7 800 ֏
от 10 шт. —
6 600 ֏
от 25 шт. —
5 800 ֏
от 100 шт. —
5 000 ֏
1 шт.
на сумму 7 800 ֏
Описание
Unclassified
USB-C Chargers & Adapters Infineon Technologies offers tailor-made semiconductors considering customers" priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery as well as ESD protection devices.
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 240 |
| Fall Time: | 4 ns |
| Id - Continuous Drain Current: | 48 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-4 |
| Packaging: | Tube |
| Part # Aliases: | IPZA60R060P7 SP001707738 |
| Pd - Power Dissipation: | 164 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 67 nC |
| Rds On - Drain-Source Resistance: | 49 mOhms |
| Rise Time: | 8 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 79 ns |
| Typical Turn-On Delay Time: | 23 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Current - Continuous Drain (Id) @ 25В°C | 48A(Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2895pF @ 400V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 164W(Tc) |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 15.9A, 10V |
| Series | CoolMOSв(ў P7 |
| Supplier Device Package | PG-TO247-4 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 800ВµA |
| Вес, г | 6 |
