CY62148ELL-45ZSXI, SRAM 4Mb 45ns 512K x 8 Low Power SRAM

Фото 1/2 CY62148ELL-45ZSXI, SRAM 4Mb 45ns 512K x 8 Low Power SRAM
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Номенклатурный номер: 8005242618

Описание

Semiconductors\Memory ICs\SRAM
MOBL™ Async SRAMs Infineon Technologies MOBL™ Async SRAM devices comprise a broad portfolio with densities ranging from 64Kb to 64Mb. The MOBL SRAMs are available in industry-standard voltage, bus width, and package options. The devices offer Standby Power Dissipation (maximum) specifications. The MOBL Asynchronous SRAMs are ideal for battery-powered and battery-backed solutions across various application segments. The MOBL SRAM devices are available in industrial, automotive, and radiation-hardened temperature grades.

Технические параметры

Access Time: 45 ns
Brand: Infineon Technologies
Data Rate: SDR
Factory Pack Quantity: 1170
Interface Type: Parallel
Manufacturer: Infineon
Maximum Operating Temperature: +85 C
Memory Size: 4 Mbit
Memory Type: Volatile
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Number of Ports: 1
Organisation: 512 k x 8
Package/Case: TSOP-32
Packaging: Tray
Product Category: SRAM
Product Type: SRAM
Subcategory: Memory & Data Storage
Supply Current - Max: 20 mA
Supply Voltage - Max: 5.5 V
Supply Voltage - Min: 4.5 V
Type: Asynchronous
Access Time 45 ns
Brand Cypress Semiconductor
Data Rate SDR
Factory Pack Quantity 1000
Interface Type Parallel
Manufacturer Cypress Semiconductor
Maximum Operating Temperature +85 C
Memory Size 4 Mbit
Memory Type SDR
Minimum Operating Temperature -40 C
Mounting Style SMD/SMT
Number of Ports 1
Operating Temperature Range -40 C to+85 C
Organization 512 k x 8
Package / Case TSOP-32
Packaging Reel
Product Category SRAM
RoHS Details
Series CY62148ELL
Supply Current - Max 20 mA
Supply Voltage - Max 5.5 V
Supply Voltage - Min 4.5 V
Tradename MoBL
Type Asynchronous
Number of Bits per Word 8bit
Number of Words 512k
Organisation 512K x 8
Вес, г 0.44

Техническая документация

Datasheet
pdf, 811 КБ