IXFH20N80P, MOSFETs 20 Amps 800V 0.52 Rds
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
12 500 ֏
от 10 шт. —
11 900 ֏
Добавить в корзину 1 шт.
на сумму 12 500 ֏
Описание
Unclassified
Описание Транзистор: N-MOSFET, полевой, 800В, 20А, 500Вт, TO247-3 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Fall Time: | 24 ns |
Forward Transconductance - Min: | 14 S |
Id - Continuous Drain Current: | 20 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 500 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 86 nC |
Rds On - Drain-Source Resistance: | 520 mOhms |
Rise Time: | 24 ns |
Series: | IXFH20N80 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | HiPerFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | PolarHV HiPerFET Power MOSFET |
Typical Turn-Off Delay Time: | 85 ns |
Typical Turn-On Delay Time: | 30 ns |
Vds - Drain-Source Breakdown Voltage: | 800 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Case | TO247-3 |
Drain current | 20A |
Drain-source voltage | 800V |
Gate charge | 86nC |
Kind of channel | enhanced |
Kind of package | tube |
Manufacturer | IXYS |
Mounting | THT |
On-state resistance | 0.52Ω |
Polarisation | unipolar |
Power dissipation | 500W |
Type of transistor | N-MOSFET |
Вес, г | 6.095 |