IXFK100N65X2, MOSFETs MOSFET 650V/100A Ultra Junction X2
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
22 700 ֏
от 10 шт. —
20 200 ֏
от 25 шт. —
16 400 ֏
от 100 шт. —
14 300 ֏
Добавить в корзину 1 шт.
на сумму 22 700 ֏
Описание
Unclassified
X-Class 850V - 1000V Power MOSFETs with HiPerFET™IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 40 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-264-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.04 kW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 180 nC |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Rise Time: | 24 ns |
| Series: | 650V Ultra Junction X2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 83 ns |
| Typical Turn-On Delay Time: | 59 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.4V |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 30 mΩ |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.04 kW |
| Minimum Gate Threshold Voltage | 2.7V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-264P |
| Pin Count | 3 |
| Series | HiperFET, X2-Class |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 183 nC @ 10 V |
| Width | 26.3mm |
| Вес, г | 74 |
