IXFK170N20T, MOSFETs 170A 200V
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Описание
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Описание Транзистор N-MOSFET, 200В, 170А, 1150Вт, TO264 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 25 |
Fall Time: | 22 ns |
Forward Transconductance - Min: | 85 S |
Id - Continuous Drain Current: | 170 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-264-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 1.15 kW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 265 nC |
Rds On - Drain-Source Resistance: | 11 mOhms |
Rise Time: | 28 ns |
Series: | IXFK170N20 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | HiPerFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | GigaMOS Power MOSFET |
Typical Turn-Off Delay Time: | 80 ns |
Typical Turn-On Delay Time: | 33 ns |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Вес, г | 8 |
Техническая документация
Datasheet IXFK170N20T
pdf, 130 КБ