IXFK170N25X3, MOSFETs 250V/170A Ultra Junc tion X3-Class MOSFE
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Описание
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Описание Транзистор: N-MOSFET, полевой, 250В, 170А, 890Вт, TO264, 140нс Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 25 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 66 S |
| Id - Continuous Drain Current: | 170 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-264-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 960 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 190 nC |
| Rds On - Drain-Source Resistance: | 6.1 mOhms |
| Rise Time: | 10 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 62 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 246.9 |
Техническая документация
Datasheet
pdf, 1673 КБ
