IXFN60N80P, MOSFET Modules DIODE Id54 BVdass800
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
53 400 ֏
от 10 шт. —
43 100 ֏
от 20 шт. —
38 900 ֏
от 50 шт. —
38 100 ֏
1 шт.
на сумму 53 400 ֏
Описание
Unclassified
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS A wide range of advanced discrete Power MOSFET devices from IXYSundefined
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 53 A |
Maximum Drain Source Resistance | 140 mΩ |
Maximum Drain Source Voltage | 800 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1.04 kW |
Minimum Operating Temperature | -55 °C |
Mounting Type | Screw Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-227 |
Pin Count | 4 |
Series | HiperFET, Polar |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 250 nC @ 10 V |
Width | 25.42mm |
Вес, г | 30 |