IXFP90N20X3M, MOSFETs TO220 200V 90A N-CH X3CLASS
![Фото 1/2 IXFP90N20X3M, MOSFETs TO220 200V 90A N-CH X3CLASS](https://static.chipdip.ru/lib/192/DOC036192242.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/408/DOC043408090.jpg)
11 400 ֏
от 50 шт. —
8 100 ֏
1 шт.
на сумму 11 400 ֏
Описание
Unclassified
Описание Транзистор: N-MOSFET, X3-Class, полевой, 200В, 90А, 36Вт, TO220AB Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 50 |
Fall Time: | 13 ns |
Forward Transconductance - Min: | 40 S |
Id - Continuous Drain Current: | 90 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 36 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 78 nC |
Rds On - Drain-Source Resistance: | 12.8 mOhms |
Rise Time: | 26 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 62 ns |
Typical Turn-On Delay Time: | 22 ns |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Вес, г | 2 |
Техническая документация
Datasheet
pdf, 162 КБ