IXFX80N50P, MOSFETs 500V 80A
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см. техническую документацию
см. техническую документацию
26 400 ֏
от 10 шт. —
22 000 ֏
от 30 шт. —
19 500 ֏
от 60 шт. —
17 900 ֏
Добавить в корзину 1 шт.
на сумму 26 400 ֏
Описание
Unclassified
HiPerFET™ Power MOSFETsIXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 16 ns |
| Forward Transconductance - Min: | 70 S |
| Id - Continuous Drain Current: | 80 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.04 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 197 nC |
| Rds On - Drain-Source Resistance: | 65 mOhms |
| Rise Time: | 27 ns |
| Series: | IXFX80N50 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 70 ns |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 9 |
Техническая документация
Datasheet IXFX80N50P
pdf, 273 КБ
