IXTA4N150HV, MOSFETs MSFT N-CH STD-HI VOLTAGE
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Описание
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High Voltage IEEE 1500V+ Discrete Semiconductors Transistors
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 13 ns |
Id - Continuous Drain Current: | 4 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-263-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 280 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 375 nC |
Rds On - Drain-Source Resistance: | 6 Ohms |
Rise Time: | 43 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 184 ns |
Typical Turn-On Delay Time: | 44 ns |
Vds - Drain-Source Breakdown Voltage: | 1.5 kV |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Вес, г | 3.95 |
Техническая документация
Datasheet
pdf, 197 КБ