IXTA75N10P, MOSFETs 75 Amps 100V 0.025 Rds
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см. техническую документацию
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Описание
Unclassified
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 50 |
Fall Time: | 45 ns |
Id - Continuous Drain Current: | 75 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | D2PAK-3(TO-263-3) |
Packaging: | Tube |
Pd - Power Dissipation: | 360 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 74 nC |
Rds On - Drain-Source Resistance: | 25 mOhms |
Rise Time: | 53 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 66 ns |
Typical Turn-On Delay Time: | 27 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 8 |
Техническая документация
Datasheet
pdf, 320 КБ