IXTA96P085T-TRL, MOSFETs IXTA96P085T TRL
![Фото 1/2 IXTA96P085T-TRL, MOSFETs IXTA96P085T TRL](https://static.chipdip.ru/lib/603/DOC006603469.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/044/DOC007044056.jpg)
7 300 ֏
от 10 шт. —
6 200 ֏
от 25 шт. —
5 700 ֏
от 100 шт. —
4 680 ֏
Добавить в корзину 1 шт.
на сумму 7 300 ֏
Описание
Unclassified
Trans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 800 |
Fall Time: | 22 ns |
Forward Transconductance - Min: | 40 S |
Id - Continuous Drain Current: | 96 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-263-3 |
Pd - Power Dissipation: | 298 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 180 nC |
Rds On - Drain-Source Resistance: | 13 mOhms |
Rise Time: | 34 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | Trench |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 45 ns |
Typical Turn-On Delay Time: | 23 ns |
Vds - Drain-Source Breakdown Voltage: | 85 V |
Vgs - Gate-Source Voltage: | -15 V, +15 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 96 |
Maximum Drain Source Resistance (mOhm) | 13@10V |
Maximum Drain Source Voltage (V) | 85 |
Maximum Gate Source Voltage (V) | ±15 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 298000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Process Technology | TrenchP |
Product Category | Power MOSFET |
Standard Package Name | TO-263 |
Supplier Package | D2PAK |
Tab | Tab |
Typical Fall Time (ns) | 22 |
Typical Gate Charge @ 10V (nC) | 180 |
Typical Gate Charge @ Vgs (nC) | 180@10V |
Typical Input Capacitance @ Vds (pF) | 13100@25V |
Typical Rise Time (ns) | 34 |
Typical Turn-Off Delay Time (ns) | 45 |
Typical Turn-On Delay Time (ns) | 23 |
Вес, г | 2.5 |
Техническая документация
Datasheet
pdf, 194 КБ
Datasheet IXTA96P085T-TRL
pdf, 196 КБ