IXTH110N10L2, MOSFETs L2 Linear Power MOSFET
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Описание
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Linear Power MOSFETs with Extended FBSOA IXYS Linear Power MOSFETs with Extended FBSOA are N-Channel enhancement mode power MOSFETs designed for linear operation in an international standard package. IXYS Linear Power MOSFETs with Extended FBSOA feature a miniBLOC with aluminium nitride isolation, high power density, a space-saving and easy-to-mount package, and molding epoxy which meets the UL94 V-0 flammability classification.
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 30 |
| Fall Time: | 24 ns |
| Forward Transconductance - Min: | 45 S |
| Id - Continuous Drain Current: | 110 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 600 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 260 nC |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Rise Time: | 130 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 99 ns |
| Typical Turn-On Delay Time: | 28 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, кг | 59.8 |
Техническая документация
Datasheet
pdf, 163 КБ
