IXTK102N65X2, MOSFETs MSFT N-CH ULTRA JNCT X2 3&44
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Описание
Unclassified
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.4V |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 30 mΩ |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.04 kW |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-264P |
| Pin Count | 3 |
| Series | X2-Class |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 152 nC @ 10 V |
| Width | 26.3mm |
| Вес, г | 574 |
