IXTP05N100, MOSFETs 0.75 Amps 1000V 15 Rds
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
3 600 ֏
от 10 шт. —
3 250 ֏
от 50 шт. —
2 560 ֏
от 100 шт. —
2 050 ֏
Добавить в корзину 1 шт.
на сумму 3 600 ֏
Описание
Unclassified
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 50 |
Fall Time: | 28 ns |
Forward Transconductance - Min: | 0.55 S |
Id - Continuous Drain Current: | 750 mA |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 40 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 7.8 nC |
Rds On - Drain-Source Resistance: | 17 Ohms |
Rise Time: | 19 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | High Voltage Power MOSFET |
Typical Turn-Off Delay Time: | 40 ns |
Typical Turn-On Delay Time: | 11 ns |
Vds - Drain-Source Breakdown Voltage: | 1 kV |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Вес, г | 2 |
Техническая документация
Datasheet
pdf, 218 КБ