IXTP140N12T2, MOSFETs MSFT N-CH TRENCH GATE -GEN2
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Описание
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HiPerFET™ Power MOSFETs IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 50 |
| Fall Time: | 17 ns |
| Forward Transconductance - Min: | 66 S |
| Id - Continuous Drain Current: | 140 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 577 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | Power MOSFET Modules |
| Qg - Gate Charge: | 174 nC |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Rise Time: | 30 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Trench T2 |
| Typical Turn-Off Delay Time: | 39 ns |
| Typical Turn-On Delay Time: | 27 ns |
| Vds - Drain-Source Breakdown Voltage: | 120 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| California Prop 65 | Warning Information |
| Current - Continuous Drain (Id) @ 25В°C | 140A (Tc) |
| Drain to Source Voltage (Vdss) | 120V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 174nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 9700pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 577W (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 70A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | TrenchT2в„ў -> |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 250ВµA |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 237 КБ
Datasheet IXTP140N12T2
pdf, 211 КБ
