Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Ixys › IXTP3N100P, MOSFETs 3 Amps 1000V 4.8 Rds

IXTP3N100P, MOSFETs 3 Amps 1000V 4.8 Rds

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5 800 ֏

от 10 шт. — 4 490 ֏

от 50 шт. — 4 050 ֏

от 100 шт. — 3 230 ֏

Добавить в корзину 1 шт. на сумму 5 800 ֏

Номенклатурный номер: 8005250229

Бренд: Ixys Corporation

Описание

Unclassified

Smart Metering Solutions Littelfuse Smart Metering Solutions help designers implement more reliable and safer smart meters. Littelfuse solutions for smart meters allow designers to bring Internet of Things technology to the key functions of a smart metering system.

Технические параметры

Brand:	IXYS
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	50
Fall Time:	29 ns
Forward Transconductance - Min:	1.5 S
Id - Continuous Drain Current:	3 A
Manufacturer:	IXYS
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	125 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	39 nC
Rds On - Drain-Source Resistance:	4.8 Ohms
Rise Time:	27 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	Polar Power MOSFET
Typical Turn-Off Delay Time:	75 ns
Typical Turn-On Delay Time:	22 ns
Vds - Drain-Source Breakdown Voltage:	1 kV
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Continuous Drain Current (Id)	3A
Drain Source On Resistance (RDS(on)@Vgs,Id)	4.8Ω@10V, 1.5A
Drain Source Voltage (Vdss)	1kV
Gate Threshold Voltage (Vgs(th)@Id)	4.5V@250uA
Input Capacitance (Ciss@Vds)	1.1nF@25V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	125W
Total Gate Charge (Qg@Vgs)	39nC@10V
Type	N Channel
Вес, г	2