IXTR170P10P, MOSFETs -108.0 Amps -100V 0.013 Rds
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см. техническую документацию
см. техническую документацию
26 900 ֏
от 10 шт. —
22 400 ֏
от 30 шт. —
19 900 ֏
от 60 шт. —
18 100 ֏
Добавить в корзину 1 шт.
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Описание
Unclassified
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 30 |
| Fall Time: | 45 ns |
| Forward Transconductance - Min: | 35 S |
| Id - Continuous Drain Current: | 108 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 312 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 240 nC |
| Rds On - Drain-Source Resistance: | 13 mOhms |
| Rise Time: | 75 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Type: | PolarP Power MOSFET |
| Typical Turn-Off Delay Time: | 82 ns |
| Typical Turn-On Delay Time: | 32 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 167 КБ
