IXTU01N100, MOSFETs 0.1 Amps 1000V 80 Rds
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см. техническую документацию
3 780 ֏
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2 980 ֏
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2 760 ֏
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2 280 ֏
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Описание
Unclassified
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 70 |
Fall Time: | 28 ns |
Forward Transconductance - Min: | 160 mS |
Id - Continuous Drain Current: | 100 mA |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-251-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 25 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 6.9 nC |
Rds On - Drain-Source Resistance: | 80 Ohms |
Rise Time: | 12 ns |
Series: | IXTU01N100 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 28 ns |
Typical Turn-On Delay Time: | 12 ns |
Vds - Drain-Source Breakdown Voltage: | 1 kV |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 6 |
Техническая документация
Datasheet
pdf, 147 КБ