IXXK100N60C3H1, IGBTs XPT IGBT C3-Class 600V/170Amp CoPacked
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Описание
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The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.
Технические параметры
| Channel Type | N |
| Energy Rating | 600mJ |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 100 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 695 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Transistors | 1 |
| Package Type | TO-264 |
| Pin Count | 3 |
| Switching Speed | 20 → 60kHz |
| Transistor Configuration | Single |
| Вес, г | 10 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IXXK100N60C3H1
pdf, 239 КБ
