IXYX50N170C, IGBTs PLUS247 1700V 50A XPT
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Описание
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Описание Транзистор: IGBT, XPT™, 1,7кВ, 50А, 1,5кВт, PLUS247™ Характеристики Категория | Транзистор |
Тип | БТИЗ |
Вид | IGBT |
Технические параметры
Brand: | IXYS |
Collector- Emitter Voltage VCEO Max: | 1.7 kV |
Collector-Emitter Saturation Voltage: | 3.7 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 178 A |
Continuous Collector Current Ic Max: | 50 A |
Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | IXYS |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 1.5 kW |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Collector Current (Ic) | 178A |
Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
Diode Reverse Recovery Time (Trr) | 44ns |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
Input Capacitance (Cies@Vce) | - |
Operating Temperature | -55℃~+175℃@(Tj) |
Power Dissipation (Pd) | 1.5kW |
Pulsed Collector Current (Icm) | 460A |
Turn?off Switching Loss (Eoff) | 5.6mJ |
Turn?on Switching Loss (Eon) | 8.7mJ |
Type | - |
Вес, г | 6 |
Техническая документация
Datasheet
pdf, 261 КБ
Datasheet IXYX50N170C
pdf, 235 КБ