MWI15-12A7, IGBT Modules 15 Amps 1200V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
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Технические параметры
| Brand: | IXYS |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2 V |
| Configuration: | 6-Pack |
| Continuous Collector Current at 25 C: | 30 A |
| Factory Pack Quantity: | 6 |
| Gate-Emitter Leakage Current: | 200 nA |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Screw Mount |
| Package/Case: | E2 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 140 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Base Product Number | MWI -> |
| California Prop 65 | Warning Information |
| Configuration | Three Phase Inverter |
| Current - Collector (Ic) (Max) | 30A |
| Current - Collector Cutoff (Max) | 900ВµA |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| IGBT Type | NPT |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 1nF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Chassis Mount |
| NTC Thermistor | No |
| Operating Temperature | -40В°C ~ 125В°C (TJ) |
| Package | Box |
| Package / Case | E2 |
| Power - Max | 140W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | E2 |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 15A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Вес, г | 180 |
Техническая документация
Datasheet
pdf, 221 КБ
Datasheet MWI15-12A7
pdf, 200 КБ
