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RGS50TSX2DHRC11, IGBT Transistors 1200V 25A Field Stop Trench IGBT. RGS50TSX2DHR is a highly reliable IGBT for the general inverter for aut

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1 шт., срок 6-9 недель

12 500 ֏

Добавить в корзину 1 шт. на сумму 12 500 ֏

Номенклатурный номер: 8005265127

Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (V CE(sat) ) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.

Технические параметры

Brand:	ROHM Semiconductor
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.7 V
Configuration:	Single
Continuous Collector Current at 25 C:	50 A
Factory Pack Quantity: Factory Pack Quantity:	30
Gate-Emitter Leakage Current:	500 nA
Manufacturer:	ROHM Semiconductor
Maximum Gate Emitter Voltage:	-30 V, +30 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package / Case:	TO-247N-3
Packaging:	Tube
Part # Aliases:	RGS50TSX2DHR
Pd - Power Dissipation:	395 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Qualification:	AEC-Q101
Subcategory:	IGBTs
Technology:	Si
Вес, г	15.99