2SA2154CT-GR,L3F, Bipolar Transistors - BJT Transistor for Low Freq. Amplification
97870 шт., срок 6-9 недель
396 ֏
1 шт.
на сумму 396 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Bipolar Transistors Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.
Технические параметры
| Brand: | Toshiba |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 180 mV |
| Configuration: | Single |
| DC Collector/Base Gain hFE Min: | 120 |
| DC Current Gain hFE Max: | 400 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: | 10000 |
| Gain Bandwidth Product fT: | 80 MHz |
| Manufacturer: | Toshiba |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | CST-3 |
| Pd - Power Dissipation: | 100 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Base Product Number | TLP351 -> |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| ECCN | EAR99 |
| Frequency - Transition | 80MHz |
| HTSUS | 8541.21.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | SC-101, SOT-883 |
| Power - Max | 100mW |
| RoHS Status | RoHS Compliant |
| Supplier Device Package | CST3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 250 КБ
Datasheet 2SA2154CT-GR,L3F
pdf, 258 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 25 августа1 | бесплатно |
| HayPost | 28 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
