HN1B01F-GR(TE85L,F, Bipolar Transistors - BJT Dual Trans PNP NPN SM6, -50V, -0.15A
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Bipolar Transistors Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.
Технические параметры
| Brand: | Toshiba |
| Collector- Base Voltage VCBO: | 60 V, 50 V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 100 mV |
| Configuration: | Dual |
| DC Collector/Base Gain hFE Min: | 120 |
| DC Current Gain hFE Max: | 400 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 150 MHz, 120 MHz |
| Manufacturer: | Toshiba |
| Maximum DC Collector Current: | 150 mA |
| Maximum Operating Temperature: | +125 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | SM-6 |
| Pd - Power Dissipation: | 300 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN, PNP |
| Category | Bipolar Small Signal |
| Collector Current (DC) | 0.15 A |
| Collector-Base Voltage | 60 V |
| Collector-Emitter Voltage | 50 V |
| DC Current Gain | 200 |
| Emitter-Base Voltage | 5 V |
| Frequency | 150 MHz |
| Mounting | Surface Mount |
| Number of Elements | 2 |
| Operating Temp Range | -55C to 125C |
| Operating Temperature Classification | Military |
| Package Type | SM |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Power Dissipation | 0.3 W |
| Rad Hardened | No |
| Transistor Polarity | NPN/PNP |
| Вес, г | 1 |
Техническая документация
Datasheet
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Документация
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