HN4C51J(TE85L,F), Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Bipolar Transistors Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.
Технические параметры
| Brand: | Toshiba |
| Collector- Base Voltage VCBO: | 120 V |
| Collector- Emitter Voltage VCEO Max: | 120 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Configuration: | Dual |
| Continuous Collector Current: | 100 mA |
| DC Collector/Base Gain hFE Min: | 200 |
| DC Current Gain hFE Max: | 700 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Toshiba |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | SOT-25-5 |
| Pd - Power Dissipation: | 300 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Brand | Toshiba |
| Collector- Base Voltage VCBO | 120 V |
| Collector- Emitter Voltage VCEO Max | 120 V |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Configuration | Dual |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 200 |
| DC Current Gain hFE Max | 700 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 100 MHz |
| Manufacturer | Toshiba |
| Maximum DC Collector Current | 100 mA |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-25-5 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 300 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | HN4C51 |
| Transistor Polarity | NPN |
| Unit Weight | 0.000494 oz |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 324 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
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