RN1104,LF(CT, Digital Transistors NPN 50V 0.1A TRANSISTOR LOG

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9812 шт., срок 7-9 недель

242 ֏

1 шт. на сумму 242 ֏

Номенклатурный номер: 8005268466

Бренд: Toshiba

Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors

Биполярный транзистор с предварительным смещением (BJT) NPN - с предварительным смещением 50 В 100 мА 250 МГц 100 мВт SSM для поверхностного монтажа

Brand:	Toshiba
Channel Mode:	Enhancement
Collector- Emitter Voltage VCEO Max:	50 V
Configuration:	Single
Continuous Collector Current:	100 mA
DC Collector/Base Gain hFE Min:	80
Emitter- Base Voltage VEBO:	10 V
Factory Pack Quantity:	3000
Manufacturer:	Toshiba
Maximum DC Collector Current:	100 mA
Maximum Operating Frequency:	250 MHz
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package/Case:	SC-75-3
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	100 mW
Product Category:	Digital Transistors
Product Type:	Digital Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Typical Input Resistor:	47 kOhms
Typical Resistor Ratio:	1
Base Product Number	TK14 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SC-75, SOT-416
Power - Max	100mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms
RoHS Status	RoHS Compliant
Supplier Device Package	SSM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300mV @ 250ВµA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Вес, г	1