RN1108MFV,L3F, Digital Transistors TRANSISTOR

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23610 шт., срок 7-9 недель

220 ֏

1 шт. на сумму 220 ֏

Номенклатурный номер: 8005268472

Бренд: Toshiba

Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors

Биполярный транзистор с предварительным смещением (BJT) NPN - с предварительным смещением 50 В 100 мА 150 мВт Поверхностный монтаж VESM

Brand:	Toshiba
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	50 V
Configuration:	Single
DC Collector/Base Gain hFE Min:	80
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity:	8000
Manufacturer:	Toshiba
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package/Case:	VESM-3
Pd - Power Dissipation:	150 mW
Product Category:	Digital Transistors
Product Type:	Digital Transistors
Qualification:	AEC-Q101
Subcategory:	Transistors
Transistor Polarity:	NPN
Typical Input Resistor:	47 kOhms
Base Product Number	TB67S142 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
ECCN	EAR99
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-723
Power - Max	150mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47 kOhms
RoHS Status	RoHS Compliant
Supplier Device Package	VESM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300mV @ 500ВµA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Вес, г	1