RN1418,LF, Digital Transistors NPN BRT, Q1BSR=47kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A, inSOT-346 (S-Mini) package
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11578 шт., срок 7-9 недель
220 ֏
1 шт.
на сумму 220 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors
Bias Resistor Built-in Transistors (BRT) Toshiba Bias Resistor Built-in Transistors (BRT) offer a wide range of polarity options. The bias resistor transistors are available in NPN, PNP, NPN + PNP, PNP + NPN, NPN x 2, and PNP x 2 polarities. The Toshiba bias resistor built-in transistors offer 3-pin, 5-pin, and 6-pin configurations with options for single, 2-in-1 (point-symmetrical), and 2-in-1 (common-emitter) internal connections.
Технические параметры
| Brand: | Toshiba |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Configuration: | Single |
| DC Collector/Base Gain hFE Min: | 50 |
| Emitter- Base Voltage VEBO: | 25 V |
| Factory Pack Quantity: | 3000 |
| Manufacturer: | Toshiba |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | SC-59-3 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | Digital Transistors |
| Product Type: | Digital Transistors |
| Qualification: | AEC-Q101 |
| Subcategory: | Transistors |
| Transistor Polarity: | NPN |
| Typical Input Resistor: | 47 kOhms |
| Base Product Number | HN1D02 -> |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| ECCN | EAR99 |
| Frequency - Transition | 250MHz |
| HTSUS | 8541.21.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power - Max | 200mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| RoHS Status | RoHS non-compliant |
| Supplier Device Package | S-Mini |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250ВµA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Вес, г | 0.01 |
Техническая документация
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