SSM6J801R,LF, MOSFETs Small-signal MOSFET ID=-6A VDSS=-20V

SSM6J801R,LF, MOSFETs Small-signal MOSFET ID=-6A VDSS=-20V
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см. техническую документацию
1369 шт., срок 7-9 недель
530 ֏
1 шт. на сумму 530 ֏
Номенклатурный номер: 8005268672
Бренд: Toshiba

Описание

Unclassified
U-MOSVI Small Signal MOSFETs Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Технические параметры

Brand: Toshiba
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 3000
Forward Transconductance - Min: 4.5 S
Id - Continuous Drain Current: 6 A
Manufacturer: Toshiba
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: TSOP-6
Pd - Power Dissipation: 3 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 12.8 nC
Rds On - Drain-Source Resistance: 32.5 mOhms
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 107 ns
Typical Turn-On Delay Time: 32 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs - Gate-Source Voltage: -8 V, +6 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Вес, г 0.02

Техническая документация

Datasheet SSM6J801R.LF
pdf, 290 КБ

Сроки доставки

Доставка в регион Ереван

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