SSM6N58NU,LF, MOSFETs N-Ch Sm Sig FET 4A 30V 2-in-1
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см. техническую документацию
см. техническую документацию
66212 шт., срок 7-9 недель
530 ֏
1 шт.
на сумму 530 ֏
Описание
Unclassified
U-MOSVII-H MOSFETs Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | UDFN-6 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 112 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 9 ns |
| Typical Turn-On Delay Time: | 26 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Base Product Number | THNCF -> |
| Current - Continuous Drain (Id) @ 25В°C | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| ECCN | EAR99 |
| FET Feature | Logic Level Gate, 1.8V Drive |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 129pF @ 15V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 6-WDFN Exposed Pad |
| Power - Max | 1W |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 2A, 4.5V |
| RoHS Status | RoHS Compliant |
| Supplier Device Package | 6-UDFN (2x2) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 268 КБ
Datasheet SSM6N58NU,LF
pdf, 244 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
