SSM6N7002CFU,LF, MOSFETs Small-Signal MOSFET 2-in-1
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см. техническую документацию
см. техническую документацию
181180 шт., срок 7-9 недель
335 ֏
1 шт.
на сумму 335 ֏
Описание
Unclassified
U-MOSVII-H MOSFETs Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 24 ns, 24 ns |
| Id - Continuous Drain Current: | 170 mA |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SOT-363-6 |
| Pd - Power Dissipation: | 285 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 270 pC |
| Rds On - Drain-Source Resistance: | 3.9 Ohms, 3.9 Ohms |
| Rise Time: | 3 ns, 3 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 7 ns, 7 ns |
| Typical Turn-On Delay Time: | 2 ns, 2 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 210 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
