SSM6P49NU,LF, MOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
6072 шт., срок 7-9 недель
530 ֏
1 шт.
на сумму 530 ֏
Описание
Unclassified
U-MOSVI Small Signal MOSFETs Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: | 3000 |
Id - Continuous Drain Current: | 4 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package/Case: | UDFN-6 |
Pd - Power Dissipation: | 1 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Rds On - Drain-Source Resistance: | 157 mOhms |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 2 P-Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 373 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
HayPost | 15 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг